Mass - Transported GaInAsP / InP Lasers

A new microfabrication technique, mass transport, has made possible the development of a new breed of semiconductor laser devices. Mass-transported buried-heterostructure GaInAsP lasers are ideally suited for application in optical-fiber communication systems. In fact, the technology for mass-transported buried-heterostructure lasers has been transferred to a commercial fabricator, and these lasers are now being incorporated in optical-fiber communication systems. Mass transport has also led to the first practical surface-emitting diode lasers and monolithic two-dimensional laser arrays. These devices are potentially useful for applications in communications, sensors, optical signal processing, optical computing, and efficient high-power lasers.